df m 400xxm65 - f000 fast recovery dual diode module ds 5952 - 1 november 2009 (ln 26928 ) 1 / 6 www.dynexsemi.com features low reverse recovery charge high switching speed low forward volt drop isolated alsic base with aln substrates dual diodes can be paralleled for 8 00a rating lead free c onstruction 10 .2 kv isolation package applications brake chopper diodes boos t and buck circuits free - wheel circuits motor drives resonant converters induction heating multi - level switch inverters the df m 400xxm65 - f000 is a dual 65 00v, fast recovery diode (frd) module. designed for low power loss, the module is suitable for a vari ety of high voltage applications in motor drives and power conversion. fast switching times and low reverse recovery losses allow high frequency operation, making the device suitable for the latest drive designs employing pwm and high frequency switching. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: df m 400xxm65 - f000 note: when ordering, please use the complete part number key parameters v rrm 6500 v v f (typ) 3.6 v i f (max) 400 a i fm (max) 800 a external connection required for a single 8 00a diode fig. 1 circuit configuration outline type code: x (see fig. 7 for further information) fig. 2 package 6(a) 4(a) 5(k) 7(k)
df m 400xxm65 - f000 2 /6 www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include po tentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v rrm repeti tive peak reverse voltage t j = 125c 6500 v t j = 25c 6300 v t j = - 40 c 5800 v i f forward current (per arm) dc, t case = 75 c , t j = 125c 400 a i fm max. forward current t case = 115 c , t p = 1ms 800 a i 2 t i 2 t value fuse current rating v r = 0, t p = 10ms, t j = 125c 97 ka 2 s p max max. power dissipation t case = 25c, t j = 125 c 3300 w v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 10200 v q pd partial discharge C per module iec1287, v 1 = 69 00v, v 2 = 51 00v, 50hz rms 10 pc thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 56 mm clearance: 26 mm cti (comparative tracking index): > 600 symbol parameter test conditions min typ. max u nits r th(j - c) thermal resistance (per arm ) continuous dissipation C th(c - h) thermal resistance C j junction temperature - 40 - 125 c t stg storage temperature range - 40 - 125 c screw torque mounting C C
df m 400xxm65 - f000 3 / 6 www.dynexsemi.com static electrical characteristics C per arm t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i rm peak reverse current v r = 65 00v, t j = 125c 40 ma v f forward voltage i f = 4 00a 3.6 v i f = 4 00a, t j = 125c 4.1 v l m i nductance - 40 nh static electrical characteristics t case = 25c unless stated otherwise. symbol parameter te st conditions min typ max units l m module inductance (externally connected in parallel) - 20 nh r int internal resistance (per arm) - 370 ? dynamic electrical characteristics C per arm t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units q rr reverse recovery charge i f = 400a v r = 3600v di f /dt = 1300a/s 700 c i rr peak reverse recovery current 300 a e rec reverse recovery energy 1300 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units q rr reverse recovery charge i f = 4 00a v r = 36 00v di f /dt = 16 00a/s 1000 c i rr peak r everse recovery current 370 a e rec reverse recovery energy 2000 mj
df m 400xxm65 - f000 4 /6 www.dynexsemi.com fig. 3 diode typical forward characteristics fig. 4 transient thermal impedance fig. 5 dc current rating vs case temperature fig. 6 reverse bias safe operating area (rbs oa)
df m 400xxm65 - f000 5 / 6 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 1100g module outline type code: x fig. 7 module outli ne drawing 4 x m8 screwing depth max. 16 130 0.5 57 0.25 57 0.25 140 0.5 44 0.2 124 0.25 18 0.1 48 +1.5 -0.0 5 0.2 16.5 0.2 61.2 0.3 7 36.5 0.2 6 x 7 ? external connection external connection 7(c) 5(c) 6(a) 4(a)
df m 400xxm65 - f000 6 /6 www.dynexsemi.com headquarters operations customer service dynex semiconductor ltd doddington road, lincoln lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddington road, lincoln lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 50055 0 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502901 / 502753 email: power_solutions@dynexsemi.com dynex semiconductor technical documentation C not for resale. pr oduced in united kingdom. datasheet annotations: dynex semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but may change. ad vance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification. this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, appli ed or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee expressed or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, desig n o r price of any product or service. information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactor y in a specific piece of equipment. it is the users responsibi lity to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whos e failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the companys conditions of sale, which are available on request. all brand names and product names used in t his publication are trademarks, registered trademarks or trade names of their respective owners.
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